A Latch-up Immunized Lateral Trench Insulated Gate Bipolar Transistor with a p+ Diverter Structure for Smart Power Integrated Circuit (vol 40, 5267, 2001)

被引：0
|
作者：
Kang, Ey Goo [1 ]
Moon, Seung Hyun [1 ]
Sung, Man Young [1 ]
机构：
[1] Korea Univ, Dept Elect Engn, Seoul 136701, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 07期
关键词：
D O I：
10.1143/JJAP.51.079203
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页数：1
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  • [1] A latch-up immunized lateral trench insulated gate bipolar transistor with a p+ diverter structure for smart power integrated circuit
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    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (9A): : 5267 - 5270
  • [2] A latch-up immunized lateral trench insulated gate bipolar transistor with a p+ diverter structure for smart power integrated circuit
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