Plasmonic enhancement of photocurrent in MoS2 field-effect-transistor

被引：217
作者：
Lin, Jiadan [1 ]
Li, Hai [2 ]
Zhang, Hua [2 ]
Chen, Wei [1 ,3 ,4 ]
机构：
[1] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore
[2] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
[3] Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore
[4] Natl Univ Singapore, Graphene Res Ctr, Singapore 117542, Singapore
来源：
APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 20期
基金：
新加坡国家研究基金会;
关键词：
LARGE-AREA; PHOTOLUMINESCENCE; GRAPHENE; GROWTH; LAYERS;
D O I：
10.1063/1.4807658
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The two-dimensional material, molybdenum disulfide (MoS2), has attracted considerable attention for numerous applications in optoelectronics. Here, we demonstrate a plasmonic enhancement of photocurrent in MoS2 field-effect-transistor decorated with gold nanoparticles, with significantly enhanced photocurrent peaked at the plasmon resonant wavelength around 540 nm. Our findings offer a possibility to realize wavelength selectable photodetection in MoS2 based phototransistors. (C) 2013 AIP Publishing LLC.
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页数：3
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