Size, shape, and temperature dependence of the phonon relaxation dynamics of CdSe nanocrystals

被引:3
作者
Guo, N. G. [1 ,2 ]
Zhou, Z. F. [1 ,2 ]
Huang, Y. L. [1 ,2 ]
Yang, X. X. [1 ,2 ]
Jiang, R. [1 ,2 ]
Ma, Z. S. [1 ,2 ]
Sun, Chang Q. [1 ,2 ,3 ]
机构
[1] Xiangtan Univ, Key Lab Low Dimens Mat & Applicat Technol, Xiangtan 411105, Hunan, Peoples R China
[2] Xiangtan Univ, Fac Mat Optoelect & Phys, Xiangtan 411105, Hunan, Peoples R China
[3] Nanyang Technol Univ, Sch Elect & Elect Engn, NOVITAS, Singapore 639798, Singapore
关键词
RAMAN-SCATTERING; QUANTUM DOTS; LATTICE CONTRACTION; PBSE; SILICON;
D O I
10.1016/j.cplett.2013.09.024
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
From the perspective of bond order-length-strength correlation, we have formulated the Raman phonon relaxation dynamics of CdSe nanocrystals in terms of the length and energy response of the representative bond for all of the entire specimen to the change of crystal shape, size, and the heating conditions. In addition to quantification of the bond length, bond energy, atomic cohesive energy, thermal expansion coefficient, and average coordination numbers of CdSe nanostructures in various shapes, consistency between theory predictions and measurements clarifies that the bond relaxation due to heating and bond-order reduction is responsible for the frequency shift of the CdSe lattice vibration. (C) 2013 Elsevier B. V. All rights reserved.
引用
收藏
页码:167 / 170
页数:4
相关论文
共 32 条
  • [1] DFT Simulation and Vibrational Analysis of the IR and Raman Spectra of a CdSe Quantum Dot Capped by Methylamine and Trimethylphosphine Oxide Ligands
    Abuelela, Ahmed M.
    Mohamed, Tarek A.
    Prezhdo, Oleg V.
    [J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2012, 116 (27) : 14674 - 14681
  • [2] Origin of the optical phonon frequency shifts in ZnO quantum dots
    Alim, KA
    Fonoberov, VA
    Balandin, AA
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (05) : 1 - 3
  • [3] DEBYE TEMPERATURE AND STANDARD ENTROPIES AND ENTHALPIES OF COMPOUND SEMICONDUCTORS OF TYPE-I-III-VI2
    BACHMANN, KJ
    HSU, FSL
    THIEL, FA
    KASPER, HM
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (04) : 431 - 448
  • [4] ANHARMONIC EFFECTS IN LIGHT-SCATTERING DUE TO OPTICAL PHONONS IN SILICON
    BALKANSKI, M
    WALLIS, RF
    HARO, E
    [J]. PHYSICAL REVIEW B, 1983, 28 (04): : 1928 - 1934
  • [5] Electroluminescence from single monolayers of nanocrystals in molecular organic devices
    Coe, S
    Woo, WK
    Bawendi, M
    Bulovic, V
    [J]. NATURE, 2002, 420 (6917) : 800 - 803
  • [6] Noncontact temperature measurements of diamond by Raman scattering spectroscopy
    Cui, JB
    Amtmann, K
    Ristein, J
    Ley, L
    [J]. JOURNAL OF APPLIED PHYSICS, 1998, 83 (12) : 7929 - 7933
  • [7] High performance silicon nanowire field effect transistors
    Cui, Y
    Zhong, ZH
    Wang, DL
    Wang, WU
    Lieber, CM
    [J]. NANO LETTERS, 2003, 3 (02) : 149 - 152
  • [8] Geometric and Electronic Confinement Effects on Catalysis
    de la Hoz, Julibeth M. Martinez
    Balbuena, Perla B.
    [J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2011, 115 (43) : 21324 - 21333
  • [9] Density Functional Study on the Morphology and Photoabsorption of CdSe Nanoclusters
    Del Ben, Mauro
    Havenith, Remco W. A.
    Broer, Ria
    Stener, Mauro
    [J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2011, 115 (34) : 16782 - 16796
  • [10] The complete Raman spectrum of nanometric SnO2 particles
    Diéguez, A
    Romano-Rodríguez, A
    Vilà, A
    Morante, JR
    [J]. JOURNAL OF APPLIED PHYSICS, 2001, 90 (03) : 1550 - 1557