Ultra-high phosphorus-doped epitaxial Ge layers grown by HWCVD method on Si substrates

被引：4

作者：

Shengurov, Vladimir ^{[1
]}

Denisov, Sergei ^{[1
]}

Chalkov, Vadim ^{[1
]}

Trushin, Vladimir ^{[1
]}

Zaitsev, Andrei ^{[1
]}

Prokhorov, Dmitry ^{[1
]}

Filatov, Dmitry ^{[1
]}

Zdoroveishchev, Anton ^{[1
]}

Ved, Mikhail ^{[1
]}

Kudrin, Alexey ^{[1
]}

Dorokhin, Mikhail ^{[1
]}

Buzynin, Yuri ^{[2
]}

机构：

[1] Lobachevskii State Univ Nizhnii Novgorod, 23 Gagarin Ave,Bld 3, Nizhnii Novgorod 603950, Russia

[2] Russian Acad Sci, Inst Phys Microstruct, 7 Akad Skaya St, Nizhnii Novgorod 603950, Russia

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2019年 / 100卷

关键词：

Germanium; Heavy n-type doping; GaP source; Dopant distribution; Photoluminescence; GAP; FILMS; PHOTODETECTORS; SILICON; THICK;

D O I：

10.1016/j.mssp.2019.05.005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The conditions for obtaining high-quality heavily doped epitaxial Ge:P/Si(001) epitaxial layers by hot wire chemical vapor deposition were determined. The thermal decomposition of GaP was employed to provide the source of P. Extremely high electron concentration in Ge layers (up to 1.3 x 10(20) cm(-3)) were achieved. According to the secondary ion mass spectroscopy data, the P concentration was constant within the entire thickness of the Ge layers and drops down abruptly at the boundary with the Si buffer. A strong direct bandgap edge photoluminescence line has been observed from the heavily doped n(+)-Ge:P layers at room temperature.

引用

页码：175 / 178

页数：4

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