Fabrication and characterization of triangular shaped InGaAs/GaAs quantum wire structures using selective area epitaxy

被引：0
|
作者：
Kim, SI [1 ]
Park, YK [1 ]
Kim, YT [1 ]
Tan, HH [1 ]
Jagadish, C [1 ]
机构：
[1] Korea Inst Sci & Technol, Semicond Mat Lab, Seoul, South Korea
来源：
STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXXI) | 1999年 / 99卷 / 17期
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D O I：
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中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The effects of the growth parameters such as growth rate, V/III ratio, growth temperature in selective epitaxy were investigated for GaAs/AlGaAs multilayer structure. Using the investigated optimum conditions, we have fabricated triangular shaped Si doped InGaAs/GaAs quantum wire (QWR) array structure with sharp tips and smooth side walls on SiO(2) masked GaAs substrate by using selective area epitaxy. The emission peak From quantum wire was at 975 nm. Above 50 K, the emission peak from quantum wires became even stronger than that of side wall quantum wells The possible carrier capture processes in the quantum wire structure were also discussed.
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页码：64 / 69
页数：6
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