Design of Wide-Supply-Voltage-Range Bandgap Reference Circuits for Voltage Regulators

被引：0

作者：

Shih, Ming-Hsien ^{[1
]}

Wu, Hung-Hsien ^{[1
]}

Wei, Chia-Ling ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan, Taiwan

来源：

2017 IEEE 3RD INTERNATIONAL FUTURE ENERGY ELECTRONICS CONFERENCE AND ECCE ASIA (IFEEC 2017-ECCE ASIA) | 2017年

关键词：

bandgap circuit; reference voltage; temperature compensation;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Bandgap voltage is typically used as the reference voltage of voltage regulators, such as dc-dc converters. Two high-precision CMOS bandgap reference circuits, labeled as current-mode and voltage-mode bandgap circuits, are proposed. The voltage-mode bandgap circuit can work with the supply voltage ranging from 2.5 V to 5V, while the current-mode bandgap works from 1.8 V to 5V. Both of them were designed and fabricated by using the TSMC 0.35-m CMOS 3.3V/5V mixed-signal 2P4M polycide process. The measured temperature coefficient of the voltage-mode bandgap is 8.6 ppm/W when supplied by a 5-V voltage. The measured line regulation of the voltage-mode bandgap is 0.16%/V, while that of the current-mode one is 0.13%/V.

引用

页码：1867 / 1871

页数：5

共 5 条

[1] Low-dropout voltage reference: an approach to low-temperature-sensitivity architectures with high drive capability [J].

Aminzadeh, H. ;

Lotfi, R. ;

Mafinezhad, K. .

ELECTRONICS LETTERS, 2009, 45 (24) :1200-U17

[2] A sub-1-V, 10 ppm/°C, nanopower voltage reference generator [J].

De Vita, Giuseppe ;

Iannaccone, Giuseppe .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2007, 42 (07) :1536-1542

[3]

Leung KN, 2002, IEEE J SOLID-ST CIRC, V37, P526, DOI 10.1109/4.991391

[4]

Razavi B., DESIGN ANALOG CMOS I

[5] Nanopower CMOS sub-bandgap reference with 11 ppm/°C temperature coefficient [J].

Yan, W. ;

Li, W. ;

Liu, R. .

ELECTRONICS LETTERS, 2009, 45 (12) :627-628

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