Pulsed laser deposition of HfO2 thin films on indium zinc oxide: Band offsets measurements

被引：5

作者：

Craciun, D. ^{[1
]}

Craciun, V. ^{[1
]}

机构：

[1] Natl Inst Laser Plasma & Radiat Phys, Magurele, Romania

来源：

APPLIED SURFACE SCIENCE | 2017年 / 400卷

关键词：

HfO2; IZO; HfO2/IZO heterostructure; Band alignment; X-ray photoelectron spectroscopy; OPTICAL-PROPERTIES; TRANSPARENT; TRANSISTORS; SPECTROSCOPY; SILICON;

D O I：

10.1016/j.apsusc.2016.12.094

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

One of the most used dielectric films for amorphous indium zinc oxide (IZO) based thin films transistor is HfO2. The estimation of the valence band discontinuity (Delta E-V) of HfO2/IZO heterostructure grown using the pulsed laser deposition technique, with In(In + Zn)= 0.79, was obtained from X-ray photoelectron spectroscopy (XPS) measurements. The binding energies of Hf 4d5, Zn 2p3 and In 3d5 core levels and valence band maxima were measured for thick pure films and for a very thin HfO2 film deposited on a thick IZO film. A value of Delta E-V = 1.75 +/- 0.05 eV was estimated for the heterostructure. Taking into account the measured HfO2 and IZO optical bandgap values of 5.50 eV and 3.10 eV, respectively, a conduction band offset Delta E-C = 0.65 +/- 0.05 eV in HfO2/IZO heterostructure was then obtained. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：77 / 80

页数：4

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