Influence of Carrier Mobility and Interface Trap States on the Transfer and Output Characteristics of Organic Thin Film Transistors

被引：7

作者：

Bolognesi, A. ^{[1
,2
]}

Di Carlo, A. ^{[1
,2
]}

机构：

[1] Univ Roma Tor Vergata, INFM, Rome, Italy

[2] Univ Roma Tor Vergata, Dept Elect Engn, Rome, Italy

来源：

JOURNAL OF COMPUTATIONAL ELECTRONICS | 2003年 / 2卷 / 2-4期

关键词：

Monte Carlo; simulations; pentacene; mobility; trapping;

D O I：

10.1023/B:JCEL.0000011441.80136.3b

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have used two dimensional drift diffusion simulations to calculate the electrical properties of bottom contact pentacene based organic thin film transistor, taking into account field-dependent mobility and interface or bulk trap states. In order to derive from basic principles the transport properties of the organic semiconductor we have developed a Monte Carlo simulator to calculate the field dependent mobility. We analyzed the presence of trap states at the interface between organic material and gate insulator and we show the influence of trap states combined with the effect of field-dependent mobility on the transfer characteristic. Numerical calculations are also reported for the output characteristics of the device showing a very good agreement with the available experimental results.

引用

页码：297 / 300

页数：4

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