Anisotropic electrical properties of epitaxial Hf-doped Bi4Ti3O12 thin films on (100)- and (111)-oriented SrTiO3 substrates

被引：3

作者：

Zhu, J. ^{[1
]}

Wang, X. P. ^{[1
]}

Luo, W. B. ^{[1
]}

Li, Y. R. ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

来源：

18TH INTERNATIONAL VACUUM CONGRESS (IVC-18) | 2012年 / 32卷

关键词：

Thin film; Pulsed laser deposition; Bi4Ti3O12; FERROELECTRIC PROPERTIES; BISMUTH TITANATE; BI4TI3O12; FATIGUE; DEPENDENCE; DEPOSITION; MEMORIES;

D O I：

10.1016/j.phpro.2012.03.660

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Epitaxial thin films of (001)- and (104)-oriented Bi4Ti3-xHfxO12(BTH) have been fabricated on (100)- and (111)-oriented SrTiO3 substrates with SrRuO3 bottom electrodes by pulsed laser deposition, respectively. X-ray diffraction scans revealed that a unique epitaxial relationship between film and substrate: BTH (001) //SrTiO3 (001); BTH [1-10]// //SrTiO3 [100] is valid for both orientations, irrespective of their orientation. The strong dependences of ferroelectric properties on the film orientation were observed. The remanent polarization 2Pr is 45.6 mu C/cm2 for (104)-oriented BTH film, while 2Pr is 4.5 mu C/cm2 for (001)-oriented BTH film. The anisotropic properties of BTH are similar to that of pure Bi4Ti3O12(BIT): the polarization vector of BTH films is close to the a axis, indicating that Hf substitution does not change the orientation dependence of electric properties in BIT. (c) 2012 Published by Elsevier B.V. Selection and/or peer review under responsibility of Chinese Vacuum Society (CVS).

引用

页码：938 / 946

页数：9

共 20 条

[1] Microstructure of epitaxial SrRuO3 thin films on MgO substrates [J].