An Improved SiC MOSFET-Gate Driver Integrated Power Module with Ultra Low Stray Inductances

被引：0

作者：

Zhang, Liqi ^{[1
]}

Liu, Pengkun ^{[1
]}

Huang, Alex Q. ^{[1
]}

Guo, Suxuan ^{[2
]}

Yu, Ruiyang ^{[1
]}

机构：

[1] Univ Texas Austin, Dept Elect & Comp Engn, Austin, TX 78712 USA

[2] Texas Instruments Inc, Dallas, TX USA

来源：

2017 IEEE 5TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA) | 2017年

关键词：

SiC MOSFET; Gate driver; Integrated power module; Stray inductance;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An improved SiC MOSFET-gate driver integrated half-bridge module with folded layout using direct bonded copper (DBC) substrate is designed, fabricated, and tested. The bottom layer of the DBC is used as part of the power loop to achieve major reduction in the loop stray inductance. Due to the low parasitic inductance and capacitance, the gate resistor is chosen as zero to reduce the switching loss and the EMI performance is improved under high switching speed. Simulation and experimental results show the better switching performance comparing with traditional one-layer module.

引用

页码：342 / 345

页数：4

共 17 条

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