Characteristics of InAS0.8Sb0.2 photodetectors on GaAs substrates

被引:16
作者
Besikci, C [1 ]
Ozer, S
Van Hoof, C
Zimmermann, L
John, J
Merken, P
机构
[1] Middle E Tech Univ, Dept Elect Engn, TR-06531 Ankara, Turkey
[2] IMEC, B-3001 Louvain, Belgium
[3] Royal Mil Acad, B-1000 Brussels, Belgium
关键词
D O I
10.1088/0268-1242/16/12/308
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
As an alternative to HgCdTe, InAsxSb1-x is an important alloy providing bandgaps suitable for infrared detection in both 3-5 and 8-12 mum atmospheric windows. There has been interest in high-quality growth of this material on GaAs and Si substrates. This paper reports the fabrication and characteristics of mid-infrared InAs0.8Sb0.2 photodetectors grown on GaAs substrates by molecular beam epitaxy. Peak detectivities of 1.4 x 10(10) and 7.5 x 10(8) cm Hz(1/2) W-1 were measured at 77 K and 240 K. respectively. showing that the alloy is promising as an alternative to thermal detectors for near room temperature operation. A detailed analysis of the dark current showed that the reverse-bias differential resistance was limited by trap-assisted tunneling in a wide temperature range up to 150 K under low and moderately large reverse bias voltages. Noise measurements have shown that trap assisted tunneling is the source of I If noise which is increased with the addition of band to band tunneling under large reverse bias. Our observations on InAs0.8Sb0.2 photodiodes show resemblance to those reported for HgCdTe detectors. The results are encouraging for the development of mid-infrared large area focal plane arrays on GaAs substrates.
引用
收藏
页码:992 / 996
页数:5
相关论文
共 25 条
  • [1] [Anonymous], 1995, INFRARED PHOTON DETE
  • [2] ANOMALOUS HALL-EFFECT IN INSB LAYERS GROWN BY METALORGANIC CHEMICAL-VAPOR DEPOSITION ON GAAS SUBSTRATES
    BESIKCI, C
    CHOI, YH
    SUDHARSANAN, R
    RAZEGHI, M
    [J]. JOURNAL OF APPLIED PHYSICS, 1993, 73 (10) : 5009 - 5013
  • [3] DETAILED ANALYSIS OF CARRIER TRANSPORT IN INAS0.3SB0.7 LAYERS GROWN ON GAAS SUBSTRATES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    BESIKCI, C
    CHOI, YH
    LABEYRIE, G
    BIGAN, E
    RAZEGHI, M
    COHEN, JB
    CARSELLO, J
    DRAVID, VP
    [J]. JOURNAL OF APPLIED PHYSICS, 1994, 76 (10) : 5820 - 5828
  • [4] PHOTOCONDUCTANCE MEASUREMENTS ON INAS0.22SB0.78/GAAS GROWN USING MOLECULAR-BEAM EPITAXY
    BETHEA, CG
    LEVINE, BF
    YEN, MY
    CHO, AY
    [J]. APPLIED PHYSICS LETTERS, 1988, 53 (04) : 291 - 292
  • [5] LONG WAVELENGTH INAS1-XSBX/GAAS DETECTORS PREPARED BY MOLECULAR-BEAM EPITAXY
    BETHEA, CG
    YEN, MY
    LEVINE, BF
    CHOI, KK
    CHO, AY
    [J]. APPLIED PHYSICS LETTERS, 1987, 51 (18) : 1431 - 1432
  • [6] BAND-TO-BAND TUNNEL PROCESSES IN HGCDTE - COMPARISON OF EXPERIMENTAL AND THEORETICAL-STUDIES
    BLANKS, DK
    BECK, JD
    KINCH, MA
    COLOMBO, L
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (04): : 2790 - 2794
  • [7] BACKSIDE-ILLUMINATED INASSB-GASB BROAD-BAND DETECTORS
    BUBULAC, LO
    ANDREWS, AM
    GERTNER, ER
    CHEUNG, DT
    [J]. APPLIED PHYSICS LETTERS, 1980, 36 (09) : 734 - 736
  • [8] BACKSIDE-ILLUMINATED INAS1-XSBX-INAS NARROW-BAND PHOTODETECTORS
    CHEUNG, DT
    ANDREWS, AM
    GERTNER, ER
    WILLIAMS, GM
    CLARKE, JE
    PASKO, JG
    LONGO, JT
    [J]. APPLIED PHYSICS LETTERS, 1977, 30 (11) : 587 - 589
  • [9] GROWTH OF INSB AND INAS1-XSBX ON GAAS BY MOLECULAR-BEAM EPITAXY
    CHYI, JI
    KALEM, S
    KUMAR, NS
    LITTON, CW
    MORKOC, H
    [J]. APPLIED PHYSICS LETTERS, 1988, 53 (12) : 1092 - 1094
  • [10] INAS0.85SB0.15 INFRARED PHOTODIODES GROWN ON GAAS AND GAAS-COATED SI BY MOLECULAR-BEAM EPITAXY
    DOBBELAERE, W
    DEBOECK, J
    HEREMANS, P
    MERTENS, R
    BORGHS, G
    LUYTEN, W
    VANLANDUYT, J
    [J]. APPLIED PHYSICS LETTERS, 1992, 60 (26) : 3256 - 3258