Deposition temperature and thickness effect on the resistive switching in BiFeO3 films

被引：0

作者：

Wang, Ting ^{[1
]}

Cheng, Lele ^{[1
]}

Wang, Chengxu ^{[1
]}

Cheng, Weiming ^{[1
]}

Sun, Huajun ^{[1
]}

Miao, Xiangshui ^{[1
]}

机构：

[1] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan, Hubei, Peoples R China

来源：

2018 ASIA-PACIFIC MAGNETIC RECORDING CONFERENCE (APMRC) | 2018年

基金：

中国国家自然科学基金;

关键词：

Resistive switching; BiFeO3; Deposition temperature; Thickness; Memory window;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have successfully fabricated Pt/BiFeO3/SrRuO3/SrTiO3 resistive devices with magnetron sputtering at different deposition temperatures and thicknesses. The resistive behaviors and conduction mechanisms can be modulated by the thickness and deposition temperatures of BFO films BFO films with smaller thickness and higher deposition temperature show larger memory window and lower switching voltage possibly due to the more oxygen vacancies and defects.

引用

页数：1