Graphene layer growth on silicon substrates with nickel film by pulse arc plasma deposition

被引：24

作者：

Fujita, K. ^{[1
]}

Banno, K. ^{[1
]}

Aryal, H. R. ^{[1
]}

Egawa, T. ^{[1
]}

机构：

[1] Nagoya Inst Technol, Res Ctr Nanodevice & Syst, Showa Ku, Nagoya, Aichi 4668555, Japan

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 16期

关键词：

22;

D O I：

10.1063/1.4761474

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carbon layer has been grown on a Ni/SiO2/Si(111) substrate under high vacuum pressure by pulse arc plasma deposition. From the results of Raman spectroscopy for the sample, it is found that graphene was formed by ex-situ annealing of sample grown at room temperature. Furthermore, for the sample grown at high temperature, graphene formation was shown and optimum temperature was around 1000 degrees C. Transmission electron microscopy observation of the sample suggests that the graphene was grown from step site caused by grain of Ni film. The results show that the pulse arc plasma technique has the possibility for acquiring homogenous graphene layer with controlled layer thickness. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4761474]

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页数：3

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