Charge carrier scattering and ultrafast Auger dynamics in two-dimensional superatomic semiconductors

被引：1

作者：

Kim, Heejae ^{[1
]}

Lee, Kihong ^{[2
]}

Dismukes, Avalon H. ^{[2
]}

Choi, Bonnie ^{[2
]}

Roy, Xavier ^{[2
]}

Zhu, Xiaoyang ^{[2
]}

Bonn, Mischa ^{[1
]}

机构：

[1] Max Planck Inst Polymer Res, Dept Mol Spect, Ackermannweg 10, D-55128 Mainz, Germany

[2] Columbia Univ, Dept Chem, New York, NY 10027 USA

来源：

APPLIED PHYSICS LETTERS | 2020年 / 116卷 / 20期

关键词：

RECOMBINATION; LIFETIMES; DIODES;

D O I：

10.1063/5.0001839

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Superatom solids are promising for optoelectronic applications, owing to their tunable structural and electronic properties; yet, the electronic transport properties of these materials have been largely unexplored. Here, we report the Auger recombination dynamics of free carriers in two representative two-dimensional superatomic semiconductors, Re6Se8Cl2 and Mo6S3Br6, studied using ultrafast terahertz photoconductivity measurements. The fast Auger recombination dynamics are characterized by a cubic dependence of the Auger rate on carrier density in Re6Se8Cl2 and a quadratic dependence in Mo6S3Br6. The effective lifetimes of Mo6S3Br6 (similar to 0.5 ps) are over an order of magnitude shorter than those (similar to 20 ps) of Re6Se8Cl2. These results highlight the variability of the optoelectronic properties of different superatom solids.

引用

页数：5

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