Band alignment at interfaces of few-monolayer MoS2 with SiO2 and HfO2

被引：36

作者：

Afanas'ev, V. V. ^{[1
]}

Chiappe, D. ^{[2
]}

Huyghebaert, C. ^{[2
]}

Radu, I. ^{[2
]}

De Gendt, S. ^{[2
]}

Houssa, M. ^{[1
]}

Stesmans, A. ^{[1
]}

机构：

[1] KULeuven, Semicond Phys Lab, B-3001 Leuven, Belgium

[2] IMEC, B-3001 Leuven, Belgium

来源：

MICROELECTRONIC ENGINEERING | 2015年 / 147卷

关键词：

Interface barrier; Internal photoemission; Electron affinity; Band offset; HETEROSTRUCTURES; DIAMOND(111); BARRIER;

D O I：

10.1016/j.mee.2015.04.106

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Internal photoemission of electrons from 4- and 2-monolayer thick MoS2 films prepared by sulphurization of metallic Mo on top of SiO2 or HfO2/SiO2 insulating stacks is detected. This enables determination of the energy position of the MoS2 valence band which is found to be at 4.1-4.2 eV below the SiO2 conduction band. At the interface with HfO2, a barrier height of 3.7 eV is found, corresponding to an increase of the electron affinity of MoS2 by approximate to 0.5 eV as compared to the SiO2 case. This suggests the presence of interface charges (or dipoles) in the interfacial HfO2 layer. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：294 / 297

页数：4

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