The role of one-dimensional diffusion in a growth model of the surface of a kossel's crystal

被引：0
作者：
Boiko, AM [1 ]
Suris, RA [1 ]
机构：
[1] Russian Acad Sci, Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2006年 / 40卷 / 03期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/S1063782606030213
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The kinetic mechanism of defect formation oil a vicinal surface misoriented in two directions, in the case of molecular-beam epitaxy, is studied. These defects are two adatoms stuck together ill a potential trench near the step edge. The effects of the surface parameters, as well as growth rate on the probability of defect formation are studied. It is shown that an increase in the misorientation-angle of the surface is conducive to a drastic decrease in the number of defects during growth.
引用
收藏
页码：367 / 374
页数：8
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