Evidence for electrically induced drift of threshold voltage in Ge2Sb2Te5

被引：8

作者：

Cassinerio, M. ^{[1
]}

Ciocchini, N.

Ielmini, D.

机构：

[1] Politecn Milan, Dipartimento Elttron Informaz & Bioingn, I-20133 Milan, MI, Italy

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 02期

关键词：

PHASE-CHANGE MEMORY; AMORPHOUS-SILICON; STRUCTURAL RELAXATION; NONVOLATILE MEMORIES; RESISTANCE; DENSITY; CARBON; FILMS;

D O I：

10.1063/1.4811553

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Threshold voltage (V-T) is an important parameter in phase change memory (PCM), marking the minimum voltage needed to program the memory device. In this work, we demonstrate that subthreshold pulses at V < V-T can induce an increase of V-T. The pulse-induced modification of V-T is explained primarily due to the Joule heating during V-T measurement accelerating the structural relaxation in the amorphous phase-change material. Our results demonstrate that V-T can be adjusted through applied voltage pulses in the subthreshold regime, allowing the stabilization of programmed PCM states. (C) 2013 AIP Publishing LLC.

引用

页数：4

共 26 条

[1] Physical origin of the resistance drift exponent in amorphous phase change materials [J].

Boniardi, Mattia ;

Ielmini, Daniele .

APPLIED PHYSICS LETTERS, 2011, 98 (24)

[2] Understanding Overreset Transition in Phase-Change Memory Characteristics [J].

Calderoni, A. ;

Ferro, M. ;

Varesi, E. ;

Fantini, P. ;

Rizzi, M. ;

Ielmini, D. .

IEEE ELECTRON DEVICE LETTERS, 2012, 33 (09) :1267-1269

[3] GENERATION OF DANGLING BONDS BY HIGH-TEMPERATURE ANNEALING AND HOPPING CONDUCTION IN AMORPHOUS-SILICON FILMS [J].

CHIK, KP ;

FENG, SY ;

POON, SK .

SOLID STATE COMMUNICATIONS, 1980, 33 (10) :1019-1023

[4] Modeling of Threshold-Voltage Drift in Phase-Change Memory (PCM) Devices [J].

Ciocchini, Nicola ;

Cassinerio, Marco ;

Fugazza, Davide ;

Ielmini, Daniele .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (11) :3084-3090

[5] Reduction in defect density by annealing in hydrogenated tetrahedral amorphous carbon [J].

Conway, NMJ ;

Ilie, A ;

Robertson, J ;

Milne, WI ;

Tagliaferro, A .

APPLIED PHYSICS LETTERS, 1998, 73 (17) :2456-2458

[6] CALORIMETRIC STUDIES OF CRYSTALLIZATION AND RELAXATION OF AMORPHOUS SI AND GE PREPARED BY ION-IMPLANTATION [J].

DONOVAN, EP ;

SPAEPEN, F ;

TURNBULL, D ;

POATE, JM ;

JACOBSON, DC .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) :1795-1804

[7] Band gap widening with time induced by structural relaxation in amorphous Ge2Sb2Te5 films [J].

Fantini, P. ;

Brazzelli, S. ;

Cazzini, E. ;

Mani, A. .

APPLIED PHYSICS LETTERS, 2012, 100 (01)

[8]

Fugazza D., 2009, IEDM, P723

[9] Temperature acceleration of structural relaxation in amorphous Ge2Sb2Te5 [J].

Ielmini, D. ;

Lavizzari, S. ;

Sharma, D. ;

Lacaita, A. L. .

APPLIED PHYSICS LETTERS, 2008, 92 (19)

[10] Recovery and drift dynamics of resistance and threshold voltages in phase-change memories [J].

Ielmini, Daniele ;

Lacaita, Andrea L. ;

Mantegazza, Davide .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (02) :308-315

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