Polarity control and growth of lateral polarity structures in AlN

被引：67

作者：

Kirste, Ronny ^{[1
]}

Mita, Seiji ^{[2
]}

Hussey, Lindsay ^{[1
]}

Hoffmann, Marc P. ^{[1
]}

Guo, Wei ^{[1
]}

Bryan, Isaac ^{[1
]}

Bryan, Zachary ^{[1
]}

Tweedie, James ^{[1
]}

Xie, Jinqiao ^{[2
]}

Gerhold, Michael ^{[3
]}

Collazo, Ramon ^{[1
]}

Sitar, Zlatko ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

[2] HexaTech Inc, Morrisville, NC 27560 USA

[3] USA, Res Off, Engn Sci Directorate, Res Triangle Pk, NC 27703 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 18期

关键词：

INVERSION DOMAINS;

D O I：

10.1063/1.4804575

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The control of the polarity of metalorganic chemical vapor deposition grown AlN on sapphire is demonstrated. Al-polar and N-polar AlN is grown side-by-side yielding a lateral polarity structure. Scanning electron microscopy measurements reveal a smooth surface for the Al-polar and a relatively rough surface for the N-polar AlN domains. Transmission electron microscopy shows mixed edge-screw type dislocations with polarity-dependent dislocation bending. Raman spectroscopy reveals compressively strained Al-polar and relaxed N-polar domains. The near band edge luminescence consists of free and bound excitons which are broadened for the Al-polar AlN. Relaxation, better optical quality, and dislocation bending in the N-polar domains are explained by the columnar growth mode. (C) 2013 AIP Publishing LLC.

引用

页数：4

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