The influence of the interfacial layer on the stability of all-solution-processed organic light-emitting diodes

被引:3
|
作者
Yang, Lan-Sheng [1 ]
Meng, Hsin-Fei [2 ]
Chao, Yu-Chiang [3 ]
Huang, Hu-Chi [2 ]
Luo, Chih-Wei [1 ]
Zan, Hsiao-Wen [4 ]
Horng, Sheng-Fu [5 ]
Huang, Heh-Lung [6 ]
Lai, Cheng-Chang [6 ]
Liou, Yiing-Mei [7 ]
机构
[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan
[2] Natl Chiao Tung Univ, Dept Phys, Hsinchu 30010, Taiwan
[3] Natl Taiwan Normal Univ, Dept Phys, Taipei 116, Taiwan
[4] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan
[5] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 300, Taiwan
[6] E Ray Optoelect Technol Co Ltd, Taipei, Taiwan
[7] Natl Yang Ming Univ, Inst Community Hlth Care, Sch Nursing, Taipei, Taiwan
关键词
ELECTRON-INJECTION LAYER; ELECTROLUMINESCENT DEVICES; HIGHLY EFFICIENT; WORK-FUNCTION; BUFFER LAYER; CATHODE; PERFORMANCE; ALUMINUM; CSF; COMPLEXES;
D O I
10.1039/d0ra03364b
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Improving the stability of large-area organic light-emitting diodes is very important for practical applications. The interfacial layer plays a crucial role to improve the electron injection characteristic. In this work, devices prepared by various solution-processed interfacial materials and thermal-evaporated CsF were compared. In the devices with active area of 2.25 mm x 2.25 mm, we found that the performance and lifetime of the device with solution-processedLiqinterfacial layer was comparable with the device with thermal-evaporated CsF. However, for the devices with active area of 2.4 cm x 3.7 cm, the device based on thermal-evaporated CsF was the champion in both performance and lifetime. The influence of the thickness of CsF on the stability was investigated. The most stable blue fluorescent devices can be achieved when the thickness of CsF is about 0.1 nm, while the most stable green phosphorescent devices can be obtained by depositing 0.2 nm CsF. The best current efficiency for the blue fluorescent device is 4 cd A(-1), while the best one for the green phosphorescent device is 22 cd A(-1). Furthermore, burning points causing the failure of the devices were investigated by scanning electron microscopy, atomic force microscopy, thermography and secondary ion mass spectrometry. We demonstrated that burning points are defects, which can be observed after long-time operation, showing higher local temperature and fragmentary electrode.
引用
收藏
页码:28766 / 28777
页数:12
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