Sequential write-read operations in FeRh antiferromagnetic memory

被引：83

作者：

Moriyama, Takahiro ^{[1
]}

Matsuzaki, Noriko ^{[1
]}

Kim, Kab-Jin ^{[1
]}

Suzuki, Ippei ^{[2
]}

Taniyama, Tomoyasu ^{[2
]}

Ono, Teruo ^{[1
]}

机构：

[1] Kyoto Univ, Inst Chem Res, Uji, Kyoto 6110011, Japan

[2] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 12期

关键词：

MAGNETIC TRANSITION;

D O I：

10.1063/1.4931567

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

B2-ordered FeRh has been known to exhibit antiferromagnetic-ferromagnetic (AF-F) phase transitions in the vicinity of room temperature. Manipulation of the Neel order via AF-F phase transition and recent experimental observation of the anisotropic magnetoresistance in antiferromagnetic FeRh has proven that FeRh is a promising candidate for antiferromagnetic memory material. In this work, we demonstrate sequential write and read operations in antiferromagnetic memory resistors made of B2-orderd FeRh thin films by a magnetic field and electric current only, which open a realistic pathway towards operational antiferromagnetic memory devices. (C) 2015 AIP Publishing LLC.

引用

页数：4

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