Origin of Bulk Uniaxial Anisotropy in Zinc-Blende Dilute Magnetic Semiconductors

被引：51

作者：

Birowska, M. ^{[1
]}

Sliwa, C. ^{[2
]}

Majewski, J. A. ^{[1
]}

Dietl, T. ^{[1
,2
]}

机构：

[1] Univ Warsaw, Fac Phys, Inst Theoret Phys, PL-00681 Warsaw, Poland

[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

PHYSICAL REVIEW LETTERS | 2012年 / 108卷 / 23期

关键词：

MOLECULAR-BEAM EPITAXY; ELECTRON THEORY; (GA; MN)AS; GAAS;

D O I：

10.1103/PhysRevLett.108.237203

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

It is demonstrated that the nearest-neighbor Mn pair on the GaAs (001) surface has a lower energy for the [(1) over bar 10] direction compared to the [110] case. According to the group theory and Luttinger's method of invariants, this specific Mn distribution results in bulk uniaxial in-plane and out-of-plane anisotropies. The sign and magnitude of the corresponding anisotropy energies determined by a perturbation method and ab initio computations are consistent with experimental results.

引用

页数：5

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