Study of microstructure deflections and film/substrate curvature under generalized stress fields and mechanical properties

被引:7
作者
Camarda, Massimo [1 ]
Anzalone, Ruggero [1 ]
La Magna, Antonino [1 ]
La Via, Francesco [1 ]
机构
[1] CNR, IMM, Sez Catania, I-95121 Catania, Italy
关键词
Stress; Hetero epitaxy; Micro-structures; THIN-FILMS; SINGLE; STRAIN; SIMULATION; ACCURATE; EQUATION;
D O I
10.1016/j.tsf.2012.02.014
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this article we use a recently developed analytical stress theory to describe hetero-epitaxial growths, extending the analysis capability in case of extreme conditions of strongly nonlinear dependence of the local strain field and of the elastic properties (Young modulus) on the film thickness. We apply this extended theory to study the heteroepitaxial growth of cubic silicon carbide on silicon (100). (C) 2012 Elsevier B. V. All rights reserved.
引用
收藏
页码:26 / 29
页数:4
相关论文
共 19 条
[1]   Advanced Residual Stress Analysis and FEM Simulation on Heteroepitaxial 3C-SiC for MEMS Application [J].
Anzalone, R. ;
D'Arrigo, G. ;
Camarda, M. ;
Locke, C. ;
Saddow, S. E. ;
La Via, F. .
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2011, 20 (03) :745-752
[2]   Defect Influence on Heteroepitaxial 3C-SiC Young's Modulus [J].
Anzalone, R. ;
Camarda, M. ;
Canino, A. ;
Piluso, N. ;
La Via, F. ;
D'Arrigo, D. .
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2011, 14 (04) :H161-H162
[3]   Residual stress measurement and simulation of 3C-SiC single and poly crystal cantilevers [J].
Anzalone, R. ;
Camarda, M. ;
Alquier, D. ;
Italia, M. ;
Severino, A. ;
Piluso, N. ;
La Magna, A. ;
Foti, G. ;
Locke, C. ;
Saddow, S. E. ;
Roncaglia, A. ;
Mancarella, F. ;
Poggi, A. ;
D'Arrigo, G. ;
La Via, F. .
SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 :865-+
[4]   Complete determination of the local stress field in epitaxial thin films using single microstructure [J].
Camarda, Massimo ;
Anzalone, Ruggero ;
Severino, Andrea ;
Piluso, Nico ;
La Magna, Antonino ;
La Via, Francesco .
SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, 679-680 :213-216
[5]   A SIMPLE TECHNIQUE FOR THE DETERMINATION OF MECHANICAL STRAIN IN THIN-FILMS WITH APPLICATIONS TO POLYSILICON [J].
GUCKEL, H ;
RANDAZZO, T ;
BURNS, DW .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (05) :1671-1675
[6]   Extension of the Stoney formula for film-substrate systems with gradient stress for MEMS applications [J].
Huang, SS ;
Zhang, X .
JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2006, 16 (02) :382-389
[7]   New method for an accurate determination of residual strain in polycrystalline silicon films by analysing resonant frequencies of micromachined beams [J].
Ikehara, T ;
Zwijze, RAF ;
Ikeda, K .
JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2001, 11 (01) :55-60
[8]   Celebrating the 100th anniversary of the Stoney equation for film stress: Developments from polycrystalline steel strips to single crystal silicon wafers [J].
Janssen, G. C. A. M. ;
Abdalla, M. M. ;
van Keulen, F. ;
Pujada, B. R. ;
van Venrooy, B. .
THIN SOLID FILMS, 2009, 517 (06) :1858-1867
[9]   How accurate are Stoney's equation and recent modifications [J].
Klein, CA .
JOURNAL OF APPLIED PHYSICS, 2000, 88 (09) :5487-5489
[10]   LATTICE-DYNAMICS OF SEVERAL ANB8-N COMPOUNDS HAVING ZINCBLENDE STRUCTURE .2. NUMERICAL-CALCULATIONS [J].
KUNC, K ;
BALKANSKI, M ;
NUSIMOVICI, MA .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 72 (01) :229-248