Detection of residual stress in Ba(Mg1/3Ta2/3)O3 thin films by nanoindentation technique

被引：11

作者：

Wu, Zhi ^{[1
]}

Thou, Jing ^{[1
]}

Chen, Wen ^{[1
]}

Shen, Jie ^{[1
]}

Lv, Chun ^{[1
]}

Qi, Yanyuan ^{[1
]}

机构：

[1] Wuhan Univ Technol, Sch Mat Sci & Engn, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China

来源：

CERAMICS INTERNATIONAL | 2015年 / 41卷 / 09期

基金：

中国国家自然科学基金;

关键词：

BMT thin films; Residual stress; Nanoindentation; Aqueous solution-gel method; CHEMICAL-VAPOR-DEPOSITION; DIELECTRIC-PROPERTIES; ELECTRICAL-PROPERTIES; RAMAN-SPECTROSCOPY; INDENTATION; DEFORMATION; THICKNESS; CERAMICS; PZT;

D O I：

10.1016/j.ceramint.2015.05.123

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this paper, Ba(Mg1/3Ta2/3)O-3 (BMT) thin films were prepared by an aqueous solution gel method on the Pt/Ti/SiO2/Si(1 0 0) substrates with different annealing temperatures. The residual stress in the BMT thin films was investigated by nanoindentation technique. As the annealing temperature increases from 700 degrees C to 800 degrees C, the residual stress by nanoindentation technique in the BMT thin film increases from 418 MPa to 475.9 MPa, which is consistent with theoretical value ranged from 402.5 MPa to 486.2 MPa. Therefore, nanoindentation technique is an effective tool for detection of the residual stress in BMT thin films. Effect of residual stress on the dielectric properties of BMT thin films annealed at different temperatures was also studied. The increase in dielectric constant of BMT thin films annealed at 700 degrees C and 750 degrees C is larger than that of BMT thin films annealed at 750 degrees C and 800 degrees C due to the combined effect of the grain size and residual stress. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

引用

页码：11632 / 11636

页数：5

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