Electronic Transport with Dielectric Confinement in Degenerate InN Nanowires

被引：25

作者：

Bloemers, Ch. ^{[1
,2
]}

Lu, J. G. ^{[3
]}

Huang, L. ^{[3
]}

Witte, C. ^{[3
]}

Gruetzmacher, D. ^{[1
,2
]}

Lueth, H. ^{[1
,2
]}

Schaepers, Th. ^{[1
,2
,4
]}

机构：

[1] Forschungszentrum Julich, PGI 9, D-52425 Julich, Germany

[2] Forschungszentrum Julich, JARA Fundamentals Future Informat Technol, D-52425 Julich, Germany

[3] Univ So Calif, Dept Phys & Astron, Los Angeles, CA 90089 USA

[4] Rhein Westfal TH Aachen, Inst Phys 2, D-52074 Aachen, Germany

来源：

NANO LETTERS | 2012年 / 12卷 / 06期

关键词：

InN nanowires; dielectric confinement; degenerate doping; donor band formation; III-V semiconductors; phase coherent transport; DONOR; CONDUCTIVITY; TEMPERATURE; RESISTIVITY; HYDROGEN;

D O I：

10.1021/nl204500r

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this Letter, we present the size effects on charge conduction in InN nanowires by comprehensive transport studies supported by theoretical analysis. A consistent model for highly degenerate narrow gap semiconductor nanowires is developed. In contrast to common knowledge of InN, there is no evidence of an enhanced surface conduction, however, high intrinsic doping exists. Furthermore, the room-temperature resistivity exhibits a strong increase when the lateral size becomes smaller than 80 nm and the temperature dependence changes from metallic to semiconductor-like. This effect is modeled by donor deactivation due to dielectric confinement, yielding a shift of the donor band to higher ionization energies as the size shrinks.

引用

页码：2768 / 2772

页数：5

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