Hard x-ray photoelectron spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures

被引：82
作者：
Sowinska, M. [1 ]
Bertaud, T. [1 ]
Walczyk, D. [1 ]
Thiess, S. [2 ]
Schubert, M. A. [1 ]
Lukosius, M. [1 ]
Drube, W. [2 ]
Walczyk, Ch. [1 ]
Schroeder, T. [1 ,3 ]
机构：
[1] IHP, D-15236 Frankfurt, Oder, Germany
[2] Deutsch Elektronen Synchrotron DESY, D-22607 Hamburg, Germany
[3] Brandenburg Tech Univ Cottbus, D-03046 Cottbus, Germany
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 23期
关键词：
IMPACT; MEMORY;
D O I：
10.1063/1.4728118
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The chemical and electronic modifications induced by the electroforming process on the Ti/HfO2/TiN-based resistive switching devices were investigated by non-destructive hard x-ray photoelectron spectroscopy (HAXPES). The results indicate an increase of the titanium top electrode oxidation at the interface with HfO2 after the electroforming process. Additionally, the binding energy values of the HAXPES peaks of the electroformed sample increased as compared to the as-prepared sample. The observed changes between both samples are attributed to the creation of n-type defects, such as oxygen vacancies, in the HfO2 layer near the Ti interface during the electroforming process. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4728118]
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页数：5
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共 34 条
  • [1] Afanas'ev V., 2011, COMMUNICATION
  • [2] Origin of oxygen vacancies in resistive switching memory devices
    Andreasson, B. P.
    Janousch, M.
    Staub, U.
    Meijer, G. I.
    Ramar, A.
    Krbanjevic, J.
    Schaeublin, R.
    [J]. 14TH INTERNATIONAL CONFERENCE ON X-RAY ABSORPTION FINE STRUCTURE (XAFS14), PROCEEDINGS, 2009, 190
  • [3] [Anonymous], 2006, PHYS SEMICONDUCTOR D
  • [4] Resistive switching of HfO2-based Metal-Insulator-Metal diodes: Impact of the top electrode material
    Bertaud, T.
    Walczyk, D.
    Walczyk, Ch.
    Kubotsch, S.
    Sowinska, M.
    Schroeder, T.
    Wenger, Ch.
    Vallee, C.
    Gonon, P.
    Mannequin, C.
    Jousseaume, V.
    Grampeix, H.
    [J]. THIN SOLID FILMS, 2012, 520 (14) : 4551 - 4555
  • [5] Oxygen vacancy in monoclinic HfO2:: A consistent interpretation of trap assisted conduction, direct electron injection, and optical absorption experiments
    Broqvist, Peter
    Pasquarello, Alfredo
    [J]. APPLIED PHYSICS LETTERS, 2006, 89 (26)
  • [6] Origin of resistivity change in NiO thin films studied by hard x-ray photoelectron spectroscopy
    Calka, P.
    Martinez, E.
    Lafond, D.
    Minoret, S.
    Tirano, S.
    Detlefs, B.
    Roy, J.
    Zegenhagen, J.
    Guedj, C.
    [J]. JOURNAL OF APPLIED PHYSICS, 2011, 109 (12)
  • [7] Impact of Engineered Ti Layer on the Memory Performance of HfOx-Based Resistive Memory
    Chen, Pang-Shiu
    Lee, Heng-Yuan
    Chen, Yu-Sheng
    Gu, Pei-Yi
    Chen, Frederick
    Tsai, Ming-Jinn
    [J]. ELECTROCHEMICAL AND SOLID STATE LETTERS, 2010, 13 (12) : H423 - H425
  • [8] An Ultrathin Forming-Free HfOx Resistance Memory With Excellent Electrical Performance
    Chen, Yu-Sheng
    Lee, Heng-Yuan
    Chen, Pang-Shiu
    Wu, Tai-Yuan
    Wang, Ching-Chiun
    Tzeng, Pei-Jer
    Chen, Frederick
    Tsai, Ming-Jinn
    Lien, Chenhsin
    [J]. IEEE ELECTRON DEVICE LETTERS, 2010, 31 (12) : 1473 - 1475
  • [9] Influence of oxygen vacancies on the electronic structure of HfO2 films
    Cho, Deok-Yong
    Lee, Jae-Min
    Oh, S. -J.
    Jang, Hoyoung
    Kim, J. -Y.
    Park, J. -H.
    Tanaka, A.
    [J]. PHYSICAL REVIEW B, 2007, 76 (16)
  • [10] Electrical properties and colossal electroresistance of heteroepitaxial SrRuO3/SrTi1-xNbxO3 (0.0002≤x≤0.02) Schottky junctions
    Fujii, T.
    Kawasaki, M.
    Sawa, A.
    Kawazoe, Y.
    Akoh, H.
    Tokura, Y.
    [J]. PHYSICAL REVIEW B, 2007, 75 (16)
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