Higgs-mode radiance and charge-density-wave order in 2H-NbSe2

被引:54
作者
Grasset, Romain [1 ]
Cea, Tommaso [2 ,3 ,4 ,5 ]
Gallais, Yann [1 ]
Cazayous, Maximilien [1 ]
Sacuto, Alain [1 ]
Cario, Laurent [6 ]
Benfatto, Lara [4 ,5 ]
Measson, Marie-Aude [1 ,7 ]
机构
[1] Univ Paris Diderot, CNRS, Sorbonne Paris Cite, UMR 7162,Lab Mat & Phenomenes Quant, F-75013 Paris, France
[2] IMDEA Nanosci, C Faraday 9, Madrid 28049, Spain
[3] Fdn Ist Italiano Tecnol, Graphene Labs, Via Morego, I-16163 Genoa, Italy
[4] Sapienza Univ Rome, ISC CNR, Ple A Moro 5, I-00185 Rome, Italy
[5] Sapienza Univ Rome, Dept Phys, Ple A Moro 5, I-00185 Rome, Italy
[6] Univ Nantes, CNRS, Inst Mat Jean Rouxel IMN, 2 Rue Houssiniere,Boite Postale 32229, F-44322 Nantes 03, France
[7] Univ Grenoble Alpes, Inst Neel, CNRS, F-38042 Grenoble, France
关键词
RAMAN-SCATTERING; COLLECTIVE MODES; SUPERCONDUCTORS; SPECTROSCOPY;
D O I
10.1103/PhysRevB.97.094502
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Despite being usually considered two competing phenomena, charge-density wave and superconductivity coexist in few systems, the most emblematic one being the transition-metal dichalcogenide 2H-NbSe2. This unusual condition is responsible for specific Raman signatures across the two phase transitions in this compound. While the appearance of a soft phonon mode is a well-established fingerprint of the charge-density-wave order, the nature of the sharp subgap mode emerging below the superconducting temperature is still under debate. In this work we use external pressure as a knob to unveil the delicate interplay between the two orders, and consequently the nature of the superconducting mode. Thanks to an advanced extreme-conditions Raman technique, we are able to follow the pressure evolution and the simultaneous collapse of the two intertwined charge-density-wave and superconducting modes. The comparison with microscopic calculations in a model system supports the Higgs-type nature of the superconducting mode and suggests that charge-density wave and superconductivity in 2H-NbSe2 involve mutual electronic degrees of freedom. These findings fill the knowledge gap on the electronic mechanisms at play in transition-metal dichalcogenides, a crucial step to fully exploit their properties in few-layer systems optimized for device applications.
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页数:12
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