Charge confining mechanisms in III-V semiconductor nanowires

被引：0

作者：

Marquardt, Oliver ^{[1
]}

Corfdir, P. ^{[2
]}

Laehnemann, J. ^{[2
]}

Ramsteiner, M. ^{[2
]}

Brandt, O. ^{[2
]}

Geelhaar, L. ^{[2
]}

Hill, M. O. ^{[3
]}

Lauhon, L. J. ^{[3
]}

Al Hassan, A. ^{[4
]}

Pietsch, U. ^{[4
]}

机构：

[1] Weierstrass Inst Angew Anal & Stochast, Mohrenstr 39, D-10117 Berlin, Germany

[2] Paul Drude Inst Festkorperelekt, Hausvogteipl 5-7, D-10117 Berlin, Germany

[3] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

[4] Univ Siegen, Nat Wissensch Tech Fak, D-57068 Siegen, Germany

来源：

2019 19TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES (NUSOD 2019) | 2019年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

III-V semiconductor nanowires exhibit unique features for application in novel optoelectronic devices. Due to their large surface-to-volume ratio, the realization of heterostructures beyond the capabilities of planar growth, that can still be integrated in Si-based electronics, becomes possible. Furthermore, polytypism was observed e.g. in GaAs nanowires such that different crystal phases coexist in the same nanowire. As different crystal phases have different electronic properties, this feature can be exploited to form crystal-phase heterostructures with atomically flat interfaces and only very small elastic deformation. We will discuss the specifics of electronic-structure simulations in such nanowires and present recent example studies.

引用

页码：19 / 20

页数：2

共 10 条

[1] Theory of the electronic structure of GaN/AIN hexagonal quantum dots [J].

Andreev, AD ;

O'Reilly, EP .

PHYSICAL REVIEW B, 2000, 62 (23) :15851-15870

[2] One-dimensional heterostructures in semiconductor nanowhiskers [J].

Björk, MT ;

Ohlsson, BJ ;

Sass, T ;

Persson, AI ;

Thelander, C ;

Magnusson, MH ;

Deppert, K ;

Wallenberg, LR ;

Samuelson, L .

APPLIED PHYSICS LETTERS, 2002, 80 (06) :1058-1060

[3] Excitonic Aharonov-Bohm Oscillations in Core-Shell Nanowires [J].

Corfdir, Pierre ;

Marquardt, Oliver ;

Lewis, Ryan B. ;

Sinito, Chiara ;

Ramsteiner, Manfred ;

Trampert, Achim ;

Jahn, Uwe ;

Geelhaar, Lutz ;

Brandt, Oliver ;

Fomin, Vladimir M. .

ADVANCED MATERIALS, 2019, 31 (03)

[4] Excitonic properties of strained wurtzite and zinc-blende GaN/AlxGa1-xN quantum dots [J].

Fonoberov, VA ;

Balandin, AA .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (11) :7178-7186

[5] NODAL HYDROGENIC WAVE FUNCTIONS OF DONORS ON SEMICONDUCTOR SURFACES [J].

LEVINE, JD .

PHYSICAL REVIEW, 1965, 140 (2A) :A586-&

[6] Modeling the electronic properties of GaAs polytype nanostructures: Impact of strain on the conduction band character [J].

Marquardt, Oliver ;

Ramsteiner, Manfred ;

Corfdir, Pierre ;

Geelhaar, Lutz ;

Brandt, Oliver .

PHYSICAL REVIEW B, 2017, 95 (24)

[7] Impact of Random Dopant Fluctuations on the Electronic Properties of InxGa1-xN/GaN Axial Nanowire Heterostructures [J].

Marquardt, Oliver ;

Geelhaar, Lutz ;

Brandt, Oliver .

NANO LETTERS, 2015, 15 (07) :4289-4294

[8] Inducing a direct-to-pseudodirect bandgap transition in wurtzite GaAs nanowires with uniaxial stress [J].

Signorello, G. ;

Loertscher, E. ;

Khomyakov, P. A. ;

Karg, S. ;

Dheeraj, D. L. ;

Gotsmann, B. ;

Weman, H. ;

Riel, H. .

NATURE COMMUNICATIONS, 2014, 5

[9] Interrelation of structural and electronic properties in InxGa1-xN/GaN quantum dots using an eight-band k•p model [J].

Winkelnkemper, Momme ;

Schliwa, Andrei ;

Bimberg, Dieter .

PHYSICAL REVIEW B, 2006, 74 (15)

[10] Observation of Dielectrically Confined Excitons in Ultrathin GaN Nanowires up to Room Temperature [J].

Zettler, Johannes K. ;

Corfdir, Pierre ;

Hauswald, Christian ;

Luna, Esperanza ;

Jahn, Uwe ;

Flissikowski, Timur ;

Schmidt, Emanuel ;

Ronning, Carsten ;

Trampert, Achim ;

Geelhaar, Lutz ;

Grahn, Holger T. ;

Brandt, Oliver ;

Fernandez-Garrido, Sergio .

NANO LETTERS, 2016, 16 (02) :973-980

← 1 →