Dynamic Control of Tunneling Conductance in Ferroelectric Tunnel Junctions

被引：5
作者：
Zou Ya-Yi [1 ,2 ]
Chew, Khian-Hooi [3 ]
Zhou Yan [1 ,4 ]
机构：
[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
[2] Peking Univ, Dept Phys, Beijing 100871, Peoples R China
[3] Univ Malaya, Dept Phys, Ctr Theoret & Computat Phys, Kuala Lumpur 50480, Malaysia
[4] Univ Hong Kong, Ctr Theoret & Computat Phys, Hong Kong, Hong Kong, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2013年 / 30卷 / 10期
关键词：
ELECTRORESISTANCE;
D O I：
10.1088/0256-307X/30/10/107701
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We investigate the dynamic characteristics of electric polarization P(t) in a ferroelectric junction under ac applied voltage and stress, and calculate the frequency response and the cut-off frequency f(0), which provides a reference for the upper limit of the working frequency. Our study might be significant for sensor and memory applications of nanodevices based on ferroelectric junctions.
引用
收藏
页数：5
相关论文
共 11 条
[1]   Electroresistance Effect in Ferroelectric Tunnel Junctions with Symmetric Electrodes [J].
Bilc, Daniel I. ;
Novaes, Frederico D. ;
Iniguez, Jorge ;
Ordejon, Pablo ;
Ghosez, Philippe .
ACS NANO, 2012, 6 (02) :1473-1478
[2]   Interface effect on ferroelectricity at the nanoscale [J].
Duan, CG ;
Sabirianov, RF ;
Mei, WN ;
Jaswal, SS ;
Tsymbal, EY .
NANO LETTERS, 2006, 6 (03) :483-487
[3]   Spin-filter tunneling magnetoresistance in a magnetic tunnel junction [J].
Jin, DF ;
Ren, Y ;
Li, ZZ ;
Xiao, MW ;
Jin, GJ ;
Hu, A .
PHYSICAL REVIEW B, 2006, 73 (01)
[4]   Theoretical current-voltage characteristics of ferroelectric tunnel junctions [J].
Kohlstedt, H ;
Pertsev, NA ;
Contreras, JR ;
Waser, R .
PHYSICAL REVIEW B, 2005, 72 (12)
[5]   Giant flexoelectric effect through interfacial strain relaxation [J].
Lee, Daesu ;
Noh, Tae Won .
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 2012, 370 (1977) :4944-4957
[6]   Current-voltage characteristics and ON/OFF ratio in ferroelectric tunnel junctions [J].
Lu, Xiaoyan ;
Li, Hui ;
Cao, Wenwu .
JOURNAL OF APPLIED PHYSICS, 2012, 112 (05)
[7]  
Luke S., 2003, APPL PHYS LETT, V83, P4592
[8]   Polarization Control of Electron Tunneling into Ferroelectric Surfaces [J].
Maksymovych, Peter ;
Jesse, Stephen ;
Yu, Pu ;
Ramesh, Ramamoorthy ;
Baddorf, Arthur P. ;
Kalinin, Sergei V. .
SCIENCE, 2009, 324 (5933) :1421-1425
[9]   Effects of electrodes and space charges on the tunneling electroresistance in the ferroelectric tunnel junction with a SrTiO3/BaTiO3 composite barrier [J].
Wu, Yin-Zhong ;
Ju, Sheng ;
Li, Zhen-Ya .
APPLIED PHYSICS LETTERS, 2010, 96 (25)
[10]   Tunneling magnetoresistance modulation in a magnetic tunnel junction with a ferroelectric barrier [J].
Zhou, Yan .
NANOTECHNOLOGY, 2011, 22 (08)
12