Reststrahl band-assisted photocurrents in epitaxial graphene layers

被引：15

作者：

Olbrich, P. ^{[1
]}

Drexler, C. ^{[1
]}

Golub, L. E. ^{[2
]}

Danilov, S. N. ^{[1
]}

Shalygin, V. A. ^{[3
]}

Yakimova, R. ^{[4
]}

Lara-Avila, S. ^{[5
]}

Kubatkin, S. ^{[5
]}

Redlich, B. ^{[6
]}

Huber, R. ^{[1
]}

Ganichev, S. D. ^{[1
]}

机构：

[1] Univ Regensburg, Terahertz Ctr, D-93040 Regensburg, Germany

[2] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[3] St Petersburg State Polytech Univ, St Petersburg 195251, Russia

[4] Linkoping Univ, S-58183 Linkoping, Sweden

[5] Chalmers Univ Technol, S-41296 Gothenburg, Sweden

[6] Radboud Univ Nijmegen, Inst Mol & Mat, FELIX Facil, NL-6525 ED Nijmegen, Netherlands

来源：

PHYSICAL REVIEW B | 2013年 / 88卷 / 24期

关键词：

PLASMONS; GENERATION; MIXER;

D O I：

10.1103/PhysRevB.88.245425

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the observation of the reststrahl band-assisted photocurrents in epitaxial graphene on SiC excited by infrared radiation. The peculiar spectral dependence for frequencies lying within the reststrahl band of the SiC substrate provides a direct and noninvasive way to probe the electric field magnitude at atomic distances from the material's surface. Furthermore our results reveal that nonlinear optical and optoelectronic phenomena in two-dimensional crystals and other atomic scale structures can be giantly enhanced by their deposition on a substrate with negative dielectric constant.

引用

页数：7

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