MBE growth of ZnCdSe/ZnCdMgSe quantum-well infrared photodetectors

被引：11
|
作者：
Shen, Aidong [1 ]
Ravikumar, Arvind Pawan [2 ]
Chen, Guopeng [1 ]
Zhao, Kuaile [1 ]
Alfaro-Martinez, Adrian [3 ]
Garcia, Thor [3 ]
de Jesus, Joel [3 ]
Tamargo, Maria C. [3 ]
Gmachl, Claire [2 ]
机构：
[1] CUNY City Coll, Dept Elect Engn, New York, NY 10031 USA
[2] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
[3] CUNY City Coll, Dept Chem, New York, NY 10031 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2013年 / 31卷 / 03期
基金：
美国国家科学基金会;
关键词：
DETECTORS; DOTS;
D O I：
10.1116/1.4794383
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors report the growth of quantum well infrared photodetectors (QWIPs) made from wide band gap II-VI semiconductors. ZnCdSe/ZnCdMgSe QWIPs in both medium-wave infrared and long-wave infrared regions were grown by molecular beam epitaxy on InP substrates. High-resolution x-ray diffraction and photoluminescence measurements showed that the as-grown samples have high structural and optical quality. Spectral responses with peaks at 8.7 mu m and 4.0 mu m have been obtained. (C) 2013 American Vacuum Society.
引用
收藏
页数：3
相关论文
共 50 条
  • [41] Simulating the spectral response of quantum dot-in-well infrared photodetectors from eight band k.p method
    Kumar, V. Anjan
    Pendyala, Naresh Babu
    Banerjee, Arup
    JOURNAL OF APPLIED PHYSICS, 2014, 116 (20)
  • [42] Self-rolling and light-trapping in flexible quantum well-embedded nanomembranes for wide-angle infrared photodetectors
    Wang, Han
    Zhen, Honglou
    Li, Shilong
    Jing, Youliang
    Huang, Gaoshan
    Mei, Yongfeng
    Lu, Wei
    SCIENCE ADVANCES, 2016, 2 (08):
  • [43] Analysis of electromagnetically induced transparency-based quantum dot infrared photodetectors
    Negi, Chandra Mohan Singh
    Kumar, Jitendra
    JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 2014, 31 (09) : 2121 - 2130
  • [44] Analysis of Threshold Current Behavior for Bulk and Quantum-Well Germanium Laser Structures
    Cai, Yan
    Han, Zhaohong
    Wang, Xiaoxin
    Camacho-Aguilera, Rodolfo E.
    Kimerling, Lionel C.
    Michel, Jurgen
    Liu, Jifeng
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2013, 19 (04)
  • [45] Bias-Tunable Quantum Well Infrared Photodetector
    Biswal, Gyana
    Yakimov, Michael
    Tokranov, Vadim
    Sablon, Kimberly
    Tulyakov, Sergey
    Mitin, Vladimir
    Oktyabrsky, Serge
    NANOMATERIALS, 2024, 14 (06)
  • [46] Improved Performance of Quantum Dot Cascade Infrared Photodetectors with Nano-Pore Structure
    Liu, Jianqi
    Zhai, Shenqiang
    Liu, Shuman
    Wang, Fengjiao
    Zhang, Jinchuan
    Zhuo, Ning
    Liu, Junqi
    Wang, Lijun
    Liu, Fengqi
    Wang, Zhanguo
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 18 (11) : 7435 - 7439
  • [47] Printed quantum dot photodetectors for applications from the high-energy to the infrared region
    Zou, Taoyu
    Choi, Taesu
    Liu, Ao
    Zhu, Huihui
    Noh, Yong-Young
    NANO ENERGY, 2024, 125
  • [48] Diffraction-Grating-Free Very Small-Pitch High-x InP/InxGa1-x as Quantum Well Infrared Photodetectors
    Besikci, C.
    Balci, S., V
    IEEE ELECTRON DEVICE LETTERS, 2022, 43 (08) : 1287 - 1290
  • [49] MBE growth of GaSb-based photodetectors on 6-inch diameter GaAs substrates via select buffers
    Fastenau, Joel M.
    Lubyshev, Dmitri
    Qiu, Yueming
    Liu, Amy W. K.
    Koerperick, Edwin J.
    Olesberg, Jon T.
    Norton, Dennis, Jr.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2013, 31 (03):
  • [50] Temperature-Dependent Charge Carrier Transfer in Colloidal Quantum Dot/Graphene Infrared Photodetectors
    Grotevent, Matthias J.
    Hail, Claudio U.
    Yakunin, Sergii
    Bachmann, Dominik
    Kara, Gokhan
    Dirin, Dmitry N.
    Calame, Michel
    Poulikakos, Dimos
    Kovalenko, Maksym, V
    Shorubalko, Ivan
    ACS APPLIED MATERIALS & INTERFACES, 2021, 13 (01) : 848 - 856
12345