MBE growth of ZnCdSe/ZnCdMgSe quantum-well infrared photodetectors

被引：11

作者：

Shen, Aidong ^{[1
]}

Ravikumar, Arvind Pawan ^{[2
]}

Chen, Guopeng ^{[1
]}

Zhao, Kuaile ^{[1
]}

Alfaro-Martinez, Adrian ^{[3
]}

Garcia, Thor ^{[3
]}

de Jesus, Joel ^{[3
]}

Tamargo, Maria C. ^{[3
]}

Gmachl, Claire ^{[2
]}

机构：

[1] CUNY City Coll, Dept Elect Engn, New York, NY 10031 USA

[2] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

[3] CUNY City Coll, Dept Chem, New York, NY 10031 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2013年 / 31卷 / 03期

基金：

美国国家科学基金会;

关键词：

DETECTORS; DOTS;

D O I：

10.1116/1.4794383

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report the growth of quantum well infrared photodetectors (QWIPs) made from wide band gap II-VI semiconductors. ZnCdSe/ZnCdMgSe QWIPs in both medium-wave infrared and long-wave infrared regions were grown by molecular beam epitaxy on InP substrates. High-resolution x-ray diffraction and photoluminescence measurements showed that the as-grown samples have high structural and optical quality. Spectral responses with peaks at 8.7 mu m and 4.0 mu m have been obtained. (C) 2013 American Vacuum Society.

引用

页数：3

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