Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material

被引：97

作者：

Rana, Anwar Manzoor ^{[1
]}

Akbar, Tahira ^{[1
]}

Ismail, Muhammad ^{[2
]}

Ahmad, Ejaz ^{[1
]}

Hussain, Fayyaz ^{[1
]}

Talib, Ijaz ^{[1
]}

Imran, Muhammad ^{[1
]}

Mehmood, Khalid ^{[3
]}

Iqbal, Khalid ^{[4
]}

Nadeem, M. Younus ^{[1
]}

机构：

[1] Bahauddin Zakariya Univ, Dept Phys, Thin Films Lab, Multan 60800, Pakistan

[2] Univ Faisalabad, Govt Coll, Dept Phys, Layyah Campus, Layyah 31200, Pakistan

[3] Bahauddin Zakariya Univ, Inst Chem Sci, Multan 60800, Pakistan

[4] Shaukat Khanum Mem Canc Hosp & Res Ctr, Dept Radiat Oncol, Lahore 54000, Pakistan

来源：

SCIENTIFIC REPORTS | 2017年 / 7卷

关键词：

TOTAL-ENERGY CALCULATIONS; CERIA THIN-FILMS; MEMORY; BIPOLAR; BEHAVIOR; MECHANISM; NITRIDE;

D O I：

10.1038/srep39539

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Resistance switching characteristics of CeO2/Ti/CeO2 tri-layered films sandwiched between Pt bottom electrode and two different top electrodes (Ti and TaN) with different work functions have been investigated. RRAM memory cells composed of TaN/CeO2/Ti/CeO2/Pt reveal better resistive switching performance instead of Ti/CeO2/Ti/CeO2/Pt memory stacks. As compared to the Ti/CeO2 interface, much better ability of TaN/CeO2 interface to store and exchange plays a key role in the RS performance improvement, including lower forming/SET voltages, large memory window (similar to 10(2)) and no significant data degradation during endurance test of >10(4) switching cycles. The formation of TaON thinner interfacial layer between TaN TE and CeO2 film is found to be accountable for improved resistance switching behavior. Partial charge density of states is analyzed using density functional theory. It is found that the conductive filaments formed in CeO2 based devices is assisted by interstitial Ti dopant. Better stability and reproducibility in cycle-to-cycle (C2C) resistance distribution and V-set/V-reset uniformity were achieved due to the modulation of current conduction mechanism from Ohmic in low field region to Schottky emission in high field region.

引用

页数：15

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