Improvement of 1.5 μm photoluminescence from reactive deposition epitaxy (RDE) grown β-FeSi2 balls in Si by high temperature annealing

被引：26

作者：

Suemasu, T ^{[1
]}

Iikura, Y ^{[1
]}

Fujii, T ^{[1
]}

Takakura, K ^{[1
]}

Hiroi, N ^{[1
]}

Hasegawa, F ^{[1
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1999年 / 38卷 / 6AB期

关键词：

beta-FeSi2; photoluminescence; silicide; reactive deposition epitaxy (RDE); molecular beam epitaxy (MBE);

D O I：

10.1143/JJAP.38.L620

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We found that 900 degrees C annealing was a very effective way to improve the 1.5 mu m photoluminescence (PL) from beta-FeSi2 balls with about 100 nm diameter grown by reactive deposition epitaxy (RDE) and embedded in Si crystals by molecular beam epitaxy (MBE). The full-width at half maximum (FWHM) of the 1.5 mu m PL peak was about 1/4 of chat of the as-grown sample, after annealing at 900 degrees C for 14 h. This was attributed to improvement of the beta-FeSi2 quality. The FWHM of an X-ray diffraction beta-FeSi2 (800) peak decreased from 0.24 degrees to 0.14 degrees by the annealing.

引用

页码：L620 / L622

页数：3

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