Hot-complex-mediated abstraction and desorption of D adatoms by H on Si(100)

被引：21

作者：

Hayakawa, E ^{[1
]}

Khanom, F

Yoshifuku, T

Shimokawa, S

Namiki, A

Ando, T

机构：

[1] Kyushu Inst Technol, Dept Elect Engn, Kitakyushu, Fukuoka 8048550, Japan

[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

来源：

PHYSICAL REVIEW B | 2002年 / 65卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.65.033405

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The collision-induced associative desorption (CID) and abstraction (ABS) of D adatoms by H have been studied on the Si(100) surfaces. D-2 CID exhibits a feature common to that of a thermal desorption from a dideuteride phase, HD ABS proceeds along an apparently second-order kinetics rather than a first-order kinetics with respect to surface D coverages. The ABS cross section is about 6 Angstrom(2), extremely large compared to the theoretical values. Both of the direct Eley-Rideal mechanism and the hot-atom mechanism are ruled out. A hot-complex-mediated reaction model is proposed for ABS and CID.

引用

页码：1 / 4

页数：4

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