Advanced thin-film chip concepts for efficient InGaN solar cells

被引：0
作者：
Koch, Holger [1 ,2 ]
Niebling, Tobias [1 ]
Pietzonka, Ines [1 ]
Scholz, Dominik [1 ]
Kalisch, Holger [2 ]
Vescan, Andrei [2 ]
Lugauer, Hans-Juergen [1 ]
机构：
[1] OSRAM Opto Semicond GmbH, D-93055 Regensburg, Germany
[2] Rhein Westfal TH Aachen, GaN Device Technol, D-52074 Aachen, Germany
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2015年 / 212卷 / 09期
关键词：
chip technology; concentrated photovoltaic; InGaN; nitride; solar cell; GAN;
D O I：
10.1002/pssa.201532064
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Two chip concepts based on thin-film technology are presented and compared regarding their suitability for concentrating photovoltaic applications. The main difference is given by the n-contact design: the first concept relies on a metal grid (MG) while the second one is based on vias (V) connected from the bottom of the solar cell. Although the MG-chip demonstrated a better performance at low solar concentrations, the V-chip was found to be more efficient at high concentrations being the relevant operation range for InGaN-based solar cell applications. Detailed investigations of JV characteristics applying varied light concentrations revealed a significantly lower series resistance as the main advantage of the V-concept leading to considerably better fill factors at high solar concentrations. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：2053 / 2058
页数：6
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