Direct experimental observation of different diffusive transport regimes in semiconductor nanostructures

被引：29

作者：

Achermann, M ^{[1
]}

Nechay, BA ^{[1
]}

Morier-Genoud, F ^{[1
]}

Schertel, A ^{[1
]}

Siegner, U ^{[1
]}

Keller, U ^{[1
]}

机构：

[1] ETH Honggerberg, HPT, Swiss Fed Inst Technol, Inst Quantum Elect, CH-8093 Zurich, Switzerland

来源：

PHYSICAL REVIEW B | 1999年 / 60卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.60.2101

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A near-field pump-probe system with nanometer-scale spatial and femtosecond temporal resolution allows us to measure complex spatiotemporal carrier diffusion dynamics in semiconductor nanostructures. Single GaAs/AlxGa1-xAs quantum wells are patterned by nanometer-scale focused ion-beam (FIB) implantation, which introduces local carrier trapping. The resulting carrier density gradients cause diffusion, which is directly observed by measuring carrier density variations in both time and space. A comprehensive experimental study allows us to identify different diffusion regimes. We find an initial diffusion regime, characterized by nonsinusoidal carrier profiles and spatially dependent temporal diffusion decay. In a long-time regime, the carrier profile is quasisinusoidal and only weakly position-dependent temporal diffusion decay is observed. [S0163-1829(99)02827-1].

引用

页码：2101 / 2105

页数：5

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