GaN HEMT Noise Model Based on Electromagnetic Simulations

被引：68

作者：

Nalli, Andrea ^{[1
]}

Raffo, Antonio ^{[1
]}

Crupi, Giovanni ^{[2
]}

D'Angelo, Sara ^{[3
]}

Resca, Davide ^{[3
]}

Scappaviva, Francesco ^{[3
]}

Salvo, Giuseppe ^{[2
]}

Caddemi, Alina ^{[2
]}

Vannini, Giorgio ^{[1
]}

机构：

[1] Univ Ferrara, Dept Engn, I-44122 Ferrara, Italy

[2] Univ Messina, DICIEAMA, I-98166 Messina, Italy

[3] Microwave Elect Commun MEC Srl, I-40127 Bologna, Italy

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2015年 / 63卷 / 08期

关键词：

Electromagnetic analysis; HEMTs; low-noise amplifiers (LNAs); noise modeling; receivers; semiconductor device modeling;

D O I：

10.1109/TMTT.2015.2447542

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a new approach for the definition and identification of a transistor model suitable for low-noise amplifier (LNA) design. The resulting model is very robust to layout modifications (i.e., source degeneration) providing accurate predictions of device noise-performance and small-signal parameters. Moreover, the described procedure is very robust since it does not require any numerical optimization, with possibly related problems like local minima and unphysical model parameters. The adopted model topology is based on a lumped element parasitic network and a black-box intrinsic device, which are both identified on the basis of full-wave electromagnetic simulations, as well as noise and S-parameter measurements. The procedure has been applied to three GaN HEMTs having different peripheries and a Ku-band LNA has been designed, demonstrating a very good agreement between measurements and predicted results.

引用

页码：2498 / 2508

页数：11

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