Molecular beam epitaxy of periodic BaF2/PbEuSe layers on Si(111)

被引：4

作者：

Fang, XM ^{[1
]}

Wu, HZ

Shi, Z

McCann, PJ

Dai, N

机构：

[1] Univ Oklahoma, Sch Elect & Comp Engn, Norman, OK 73019 USA

[2] Univ Oklahoma, Lab Elect Properties Mat, Norman, OK 73019 USA

[3] Univ Oklahoma, Dept Phys & Astron, Norman, OK 73019 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 03期

关键词：

D O I：

10.1116/1.590744

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Bragg reflector structures consisting of BaF2/PbEuSe stacks have been epitaxially grown on CaF2/Si (111) substrates, The reflectors are centered at a wavelength of 4.0 mu m with a bandwidth of about 3.0 mu m. Reflectivity as high as 95% at the center wavelength has been achieved in three-stack reflectors. Cracks were visible under an optical Normarski microscope in two-stack reflectors, The formation of cracks is probably due to the accumulation of the residual thermal strain in thick layers or the hindrance of dislocation glide at the BaF2/PbEuSe interfaces. (C) 1999 American Vacuum Society. [S0734-211X(99)06203-4].

引用

页码：1297 / 1300

页数：4

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