Plasma polymerization of cobalt tetraphenylporphyrin and the functionalities of the thin films produced

被引：19

作者：

Nakamura, K

Watanabe, M

Zhou, M

Fujishima, M

Tsuchiya, M

Handa, T

Ishii, S

Noguchi, H

Kashiwagi, K

Yoshida, Y ^{[1
]}

机构：

[1] Toyo Univ, Fac Engn, Dept Appl Chem, Kawagoe, Saitama 3508585, Japan

[2] Toyo Univ, Fac Engn, Dept Elect & Elect Engn, Kawagoe, Saitama 3508585, Japan

来源：

THIN SOLID FILMS | 1999年 / 345卷 / 01期

关键词：

plasma polymerization; cobalt tetraphenylporphyrin; semiconductor; rectification;

D O I：

10.1016/S0040-6090(99)00093-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films were prepared for the first time from cobalt tetraphenylporphyrin (CoTPP) by plasma polymerization at different r.f. powers. They had cross-linked structures in which the porphyrin ring structure of CoTPP monomer was retained to different extents. Studies by use of a sandwich type device of Au/plasma polymerized CoTPP thin film/ITO glass revealed that plasma polymerized CoTPP thin films had semiconducting characteristics of p-type. The plasma polymerized thin film prepared at an r.f. power of 10 W exhibited better rectification characteristics than those prepared at higher r.f. powers. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：99 / 103

页数：5

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