Magnetic and electronic properties of D022-Mn3Ge (001) films

被引：83
作者：
Kurt, H.
Baadji, N.
Rode, K.
Venkatesan, M.
Stamenov, P.
Sanvito, S.
Coey, J. M. D.
机构：
[1] Trinity Coll Dublin, Sch Phys, Dublin 2, Ireland
[2] Trinity Coll Dublin, CRANN, Dublin 2, Ireland
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 13期
基金：
爱尔兰科学基金会;
关键词：
TOTAL-ENERGY CALCULATIONS; PHASE-EQUILIBRIA; MN3GE;
D O I：
10.1063/1.4754123
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Oriented thin films of Mn3Ge with the tetragonal D0(22) structure, grown on strontium titanate substrates, exhibit a low magnetization M-s = 73 kA m(-1) combined with high uniaxial anisotropy K-u = 0.91 MJ m(-3) at 300 K, making them potentially useful for thermally stable sub-10 nm spin torque memory elements. The highly ordered epitaxial Mn3Ge (001) films show 46% diffusive spin polarization at the Fermi level, measured by point contact Andreev reflection. Density functional calculations show that the compounds are ferrimagnetic, with anisotropic spin polarization at the Fermi level. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4754123]
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页数：3
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