Enhanced photoluminescence in epitaxial ZnGa2O4:Mn thin-film phosphors using pulsed-laser deposition

被引：80
|
作者：
Lee, YE [1 ]
Norton, DP [1 ]
Budai, JD [1 ]
机构：
[1] Oak Ridge Natl Lab, Div Solid State, Oak Ridge, TN 37831 USA
来源：
APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 21期
关键词：
D O I：
10.1063/1.124095
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The growth and properties of ZnGa2O4:Mn thin-film phosphors on single crystal substrates using pulsed-laser deposition were investigated. Epitaxial film properties were compared to polycrystalline films deposited on glass substrates. Green photoluminescence was observed for as-deposited films with no postannealing required. Enhanced luminescent intensity in the epitaxial films was observed as compared to randomly oriented polycrystalline films, suggesting that grain boundaries and grain alignment strongly influence the luminescent properties. The ratio of Zn/Ga in the films also affected photoluminescence properties, with strong green emission observed in Zn-deficient films. (C) 1999 American Institute of Physics. [S0003-6951(99)05121-9].
引用
收藏
页码：3155 / 3157
页数：3
相关论文
共 50 条
  • [1] Blue photoluminescence in ZnGa2O4 thin-film phosphors
    Lee, YE
    Norton, DP
    Park, C
    Rouleau, CM
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (03) : 1653 - 1656
  • [2] ZnGa2O4 thin-film phosphors grown by pulsed laser ablation
    Lee, YE
    Rouleau, CM
    Park, C
    Norton, DP
    LUMINESCENT MATERIALS, 1999, 560 : 59 - 64
  • [3] Photoluminescence behavior of pulsed laser deposited ZnGa2O4 thin-film phosphors grown on various substrates
    S.S. Yi
    J.S. Bae
    B.K. Moon
    J.H. Jeong
    I.W. Kim
    H.L. Park
    Applied Physics A, 2003, 76 : 433 - 437
  • [4] Photoluminescence behavior of pulsed laser deposited ZnGa2O4 thin-film phosphors grown on various substrates
    Yi, SS
    Bae, JS
    Moon, BK
    Jeong, JH
    Kim, IW
    Park, HL
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2003, 76 (03): : 433 - 437
  • [5] Photoluminescence behaviors in ZnGa2O4 thin film phosphors deposited by a pulsed laser ablation
    Bae, JS
    Moon, BK
    Choi, BC
    Jeong, JH
    Yi, SS
    Kim, IW
    Lee, JS
    THIN SOLID FILMS, 2003, 424 (02) : 291 - 295
  • [6] Luminescence characteristics of ZnGa2O4 thin film phosphors grown by pulsed laser deposition
    Yi, SS
    Kim, IW
    Bae, JS
    Moon, BK
    Kim, SB
    Jeong, JH
    MATERIALS LETTERS, 2002, 57 (04) : 904 - 909
  • [7] Photoluminescence characteristics of Se-doped ZnGa2O4:Mn2+ thin-film phosphors grown by pulsed laser deposition on Al2O3(0001) substrates
    S.S. Yi
    J.S. Bae
    B.K. Moon
    J.H. Jeong
    J.H. Kim
    Applied Physics A, 2005, 81 : 1325 - 1328
  • [8] Photoluminescence characteristics of Se-doped ZnGa2O4:Mn2+ stop thin-film phosphors grown by pulsed laser deposition on Al2O3(0001) substrates
    Yi, SS
    Bae, JS
    Moon, BK
    Jeong, JH
    Kim, JH
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 81 (06): : 1325 - 1328
  • [9] ZnGa2O4:Mn phosphors for thin-film electroluminescent displays exhibiting improved brightness
    Flynn, M
    Kitai, AH
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (10) : H149 - H153
  • [10] Enhanced green emission in ZnGa2O4:Mn thin film phosphors by Se doping
    Jeong, JH
    Moon, BK
    Seo, HJ
    Bae, JS
    Yi, SS
    Kim, IW
    Park, HL
    APPLIED PHYSICS LETTERS, 2003, 83 (07) : 1346 - 1348
12345