Large scaled atomic layer deposition reactor for Al2O3 in FPD applications

被引：0

作者：

Washio, K. ^{[1
]}

Mori, Y. ^{[1
]}

Miyatake, N. ^{[1
]}

Murata, K. ^{[1
]}

Sugawara, Y. ^{[2
]}

Uraoka, Y. ^{[2
]}

机构：

[1] Mitsui Engn & Shipbldg Co LTD, Tamano Technol Ctr, 16-1 Tamahara,3 Chome, Okayama 7060014, Japan

[2] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300192, Japan

来源：

IDW '07: PROCEEDINGS OF THE 14TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3 | 2007年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Atomic layer deposition (ALD) method has numerous advantages such as excellent thickness uniformity, low processing temperatures and precise control of film thickness. We studied ALD Al2O3 films deposited in an ALD reactor, which handles glass substrates of 370mmx470mm in size. The ALD Al2O3 films were deposited at 80 degrees C with plasma assisted process. Their growth rate, thickness variation, step coverage and electrical breakdown field were 0.16nmcycle(-1), +/- 5%, 100% and 7.0MVcm(-1), respectively.

引用

页码：549 / +

页数：2

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