Properties of ZnO thin films grown on Si substrates by MOCVD and ZnO/Si heterojunctions

被引：44

作者：

Zhang, YT ^{[1
]}

Du, GT ^{[1
]}

Zhang, BL ^{[1
]}

Cui, YG ^{[1
]}

Zhu, HC ^{[1
]}

Chang, YC ^{[1
]}

机构：

[1] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2005年 / 20卷 / 11期

关键词：

D O I：

10.1088/0268-1242/20/11/006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Undoped n-ZnO thin films were successfully grown on p-Si (100) substrates by low-pressure metalorganic chemical vapour deposition (MOCVD). The c-axis oriented ZnO films were grown on Si at different temperatures using diethylzinc (DEZn) and oxygen (O-2). The structural and optical properties of ZnO films were investigated using x-ray diffraction (XRD) and photoluminescence (PL) spectra, respectively. It is found that the ZnO film grown at 610 C shows the best crystallinity and optical quality. Current-voltage (I-V) characteristics of all n-ZnO/p-Si heterojunctions exhibit nonlinear and rectifying characteristics with a small current leakage in the reverse direction. Junction leakage of the heterojunction deposited at 620 degrees C is higher than those of the other heterojunctions.

引用

收藏

页码：1132 / 1135

页数：4

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