Robust mesoscopic fluctuations in disordered graphene

被引：19

作者：

Bohra, G. ^{[1
]}

Somphonsane, R. ^{[2
]}

Aoki, N. ^{[3
]}

Ochiai, Y. ^{[3
]}

Ferry, D. K. ^{[3
,4
]}

Bird, J. P. ^{[1
,3
]}

机构：

[1] SUNY Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA

[2] SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USA

[3] Chiba Univ, Grad Sch Adv Integrat Sci, Inage Ku, Chiba 2638522, Japan

[4] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 09期

基金：

美国国家科学基金会;

关键词：

UNIVERSAL CONDUCTANCE FLUCTUATIONS; SPIN-ORBIT SCATTERING; QUANTUM INTERFERENCE; FIELD; COHERENCE; TEMPERATURE; ELECTRONICS; TRANSISTORS; REDUCTION; TRANSPORT;

D O I：

10.1063/1.4748167

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temperature dependence of the mesoscopic conductance fluctuations is investigated for disordered graphene. The fluctuations are generated by varying either magnetic field or carrier density (via a back-gate). Very different temperature cut-offs are found for these two types of fluctuations, with the density-induced features persisting to much higher temperatures (beyond 100 K, even) than those observed when sweeping magnetic field. The robust character of the density-dependent fluctuations may cause them to play an important role in determining the operation of future graphene nanodevices, particularly as device sizes are reduced to the nanoscale. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4748167]

引用

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