Mechanism of oxide deformation during silicon thermal oxidation

被引：14

作者：

Kageshima, H ^{[1
]}

Uematsu, M

Akagi, K

Tsuneyuki, S

Akiyama, T

Shiraishi, K

机构：

[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

[2] Univ Tokyo, Grad Sch Sci, Tokyo 1000047, Japan

[3] Mie Univ, Fac Engn, Tsu, Mie 5148507, Japan

[4] Univ Tsukuba, Grad Sch Pure & Appl Phys, Tsukuba, Ibaraki 3058571, Japan

来源：

PHYSICA B-CONDENSED MATTER | 2006年 / 376卷

关键词：

silicon oxide; interface; oxidation; first-principles calculation;

D O I：

10.1016/j.physb.2005.12.105

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Mechanisms of oxide deformation during silicon thermal oxidation are studied by investigating the energetics of intrinsic point defects in the bulk silicon oxide and in the oxide film of the silicon oxide/silicon interface with first-principles calculations. The results suggest that the SiO2 and the SiO interstitials are thought to relate to the deformation of the silicon oxide. Especially, during the silicon oxidation, the SiO interstitial is suggested to be important because it can be formed in the oxide film neighboring to the interface and can enhance the deformation of the oxide films. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：407 / 410

页数：4

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