Electrochemical and Physical Properties of Electroplated CuO Thin Films

被引：14

作者：

Dhanasekaran, V. ^{[1
]}

Mahalingam, T. ^{[2
]}

机构：

[1] Alagappa Univ, Dept Phys, Karaikkudi 630003, Tamil Nadu, India

[2] Karunya Univ, Sch Sci & Humanities, Dept Phys, Coimbatore 641114, Tamil Nadu, India

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2013年 / 13卷 / 01期

关键词：

Electrochemical Preparation; Materials Characterization; Thin Films; XRD; COPPER-OXIDE; OPTICAL-CONSTANTS; CATHODIC DEPOSITION; ALKALINE-SOLUTIONS; SURFACE-ROUGHNESS; ELECTRODEPOSITION; THICKNESS; GROWTH; ELECTROCATALYSIS; TEMPERATURE;

D O I：

10.1166/jnn.2013.6709

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Cupric oxide thin films have been prepared on ITO glass substrates from an aqueous electrolytic bath containing CuSO4 and tartaric acid. Growth mechanism has been analyzed using cyclic voltammetry. The role of pH on the structural, morphological, compositional, electrical and optical properties of CuO films is investigated. The structural studies revealed that the deposited films are polycrystalline in nature with a cubic structure. The preferential orientation of CuO thin films is found to be along (111) plane. X-ray line profile analysis has been carried out to determine the microstructure' parameters of CuO thin films. The pyramid shaped grains are observed from SEM and AFM images. The optical band gap energy and electrical activation energy is found to be 1.45 and 0.37 eV, respectively. Also, the optical constants of CuO thin films such as refractive index (n), complex dielectric constant (epsilon) extinction coefficient (k) and optical conductivity (sigma) are evaluated.

引用

页码：250 / 259

页数：10

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