Electron states of few-electron quantum dots

被引：10
|
作者：
Dai, ZH
Sun, JZ
Zhang, LD
Li, ZH
Huang, SY
Sui, PF
机构：
[1] Acad Sinica, Inst Solid State Phys, Hefei 230031, Peoples R China
[2] CCAST, World Lab, Beijing 100080, Peoples R China
[3] Yantai Univ, Dept Phys, Yantai 264005, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2002年 / 19卷 / 01期
关键词：
D O I：
10.1088/0256-307X/19/1/336
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We study few-electron semiconductor quantum dots using the unrestricted Hartree-Fock-Roothaan method based on the Gaussian basis. Our emphasis is on the energy level calculation for quantum dots. The confinement potential in a quantum dot is assumed to be in a form of three-dimensional spherical finite potential well. Some valuable results, such as the rearrangement of the energy level, have been obtained.
引用
收藏
页码：117 / 119
页数：3
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