Effect of Direct Nitridation of 4H-SiC Surface on MOS Interface States

被引：2

作者：

Sakai, Takashi ^{[1
]}

Hemmi, Mitsunori ^{[1
]}

Murata, Yusuke ^{[1
]}

Yamakami, Tomohiko ^{[1
]}

Hayashibe, Rinpei ^{[1
]}

Onuma, Yoshinaru ^{[1
]}

Kamimura, Kiichi ^{[1
]}

机构：

[1] Shinshu Univ, Dept Elect & Elect Engn, Nagano 3808553, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 | 2012年 / 717-720卷

关键词：

SiC; Nitridation; Interface states; MOS; Surface; THERMAL-OXIDATION; SILICON; FILMS; LAYER;

D O I：

10.4028/www.scientific.net/MSF.717-720.725

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A nitride layer was formed on a SiC surface by direct nitridation in pure N-2 or in NH3 diluted with N-2. The SiO2 layer was deposited by the thermal decomposition of tetraethylorthosilicate (TEOS) on the nitride layer to form an MIS diode. The XPS analysis showed that the nitride layer was oxidized during the deposition process of SiO2. The direct nitridation was effective to reduce the interface state density between the insulating layer and 4H-SiC.

引用

页码：725 / 728

页数：4

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