Electrodeposition of CdS thin-films from cadmium acetate and ammonium thiosulphate precursors

被引：25

作者：

Alam, A. E. ^{[1
]}

Cranton, W. M. ^{[1
]}

Dharmadasa, I. M. ^{[1
]}

机构：

[1] Sheffield Hallam Univ, Mat & Engn Res Inst, Sheffield S1 1WB, S Yorkshire, England

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2019年 / 30卷 / 05期

关键词：

SOLAR-CELLS; TRANSITION;

D O I：

10.1007/s10854-019-00750-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Cadmium sulphide (CdS) thin-films have been electrodeposited using two electrode system to be used as the hole back diffusion barrier (hbdb) layer for graded bandgap solar cells with p-type windows. Cadmium acetate dihydrate [Cd(CH3COO)(2)2H(2)O] and ammonium thiosulphate [(NH4)(2)S2O3] have been used as the cadmium (Cd) and sulphur (S) precursors respectively. In this work, CdS layers have been grown on glass/FTO (fluorine doped tin oxide) substrates at cathodic potentials ranging from 1300 to 1460mV in order to find the best growth voltage. N-type conductivity is observed for all the layers and band-gap ranged between 2.36 and 2.40eV for as-deposited layers and 2.31 and 2.36eV for air-annealed layers. X-ray diffraction (XRD) analysis revealed cubic/hexagonal mixed crystallinity for the as-grown layers which indicates a tendency of transiting towards hexagonal structure upon annealing. Compositional and morphological characteristics of the layers have been investigated with energy dispersive X-ray (EDX) and scanning electron microscopy (SEM) respectively.

引用

页码：4580 / 4589

页数：10

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