Modelling of high-voltage SOI-LDMOS transistors including self-heating

被引：0

作者：

Aarts, ACT ^{[1
]}

Swanenberg, MJ ^{[1
]}

Kloosterman, WJ ^{[1
]}

机构：

[1] Philips Res Labs, Eindhoven, Netherlands

来源：

SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2001 | 2001年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents (i) the compact modelling and (ii) the parameter extraction strategy of a 12 V SOI-LDMOS transistor. The LDMOS transistor is characterized by a macro model consisting of the physics based Philips' MOS Model 9 (MM9) for the channel and MOS Model 31 (MM31) for the drift region. Incorporation of the effect of self-heating during parameter extraction shows that the DC-characteristics can be described consistently and accurately over a wide range of biases, temperatures and device dimensions.

引用

页码：246 / 249

页数：4

共 3 条

[1]

DHALLEWEYN N, 1999, P ISDRS 99, P195

[2]

LIU CM, 1995, ISPSD '95 - PROCEEDINGS OF THE 7TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, P321, DOI 10.1109/ISPSD.1995.515057

[3] A-BCD: An economic 100V RESURF silicon-on-insulator BCD technology for consumer and automotive applications [J].

van der Pol, JA ;

Ludikhuize, AW ;

Huizing, HGA ;

vanVelzen, B ;

Hueting, RJE ;

Mom, JF ;

van Lijnschoten, G ;

Hessels, GJJ ;

Hooghoudt, EF ;

van Huizen, R ;

Swanenberg, MJ ;

Egbers, JHHA ;

van den Elshout, F ;

Koning, JJ ;

Schligtenhorst, H ;

Soeteman, J .

12TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS - PROCEEDINGS, 2000, :327-330

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